View TLE4261_101829.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TLE 4261
5-V Low-Drop Voltage Regulator
TLE 4261
Bipolar IC
Features
q q q q q q q q q q q q q
Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V Overvoltage protection up to 65 V ( 400 ms) Short-circuit proof External setting of reset delay Integrated watchdog circuit Wide temperature range Overtemperature protection Suitable for automotive use EMC proofed (100 V/m)
P-TO220-7-1
P-TO220-7-2 Type w TLE 4261 w TLE 4261 S w TLE 4261 G Ordering Code Q67000-A9003 Q67000-A9109 Q67000-A9059 Package P-TO220-7-1 P-TO220-7-2 P-DSO-20-6 (SMD)
w Please also refer to the new pin compatible
device TLE 4271
P-DSO-20-6 Functional Description TLE 4261 is a 5-V low-drop voltage regulator in a P-TO220-7 or in a P-DSO package. The maximum input voltage is 42 V (65 V/ 400 ms). The device can produce an output current of more than 500 mA. It is short-circuit proof and incorporates temperature protection that disables the circuit at impermissibly high temperatures.
Semiconductor Group
1
1998-11-01
TLE 4261
Application Description The IC regulates an input voltage VI in the range VI = 6 V to 40 V to VQrated = 5.0 V. A reset signal is generated for a maximum output voltage of VQ less than 4.75 V. The reset delay can be set externally with a capacitor. A connected microprocessor is monitored by the integrated watchdog circuit. Connecting this input to the input voltage makes the watchdog function inactive. The presence of a voltage less than 2 V on inhibit input disables the regulator. The current consumption drops to max. 50 A. Design Notes for External Components The input capacitor CI causes a low-resistant powerline and limits the rise times of the input voltage. The IC is protected against rise times up to 100 V/s. It is possible to damp the tuned circuit consisting of supply inductance and input capacitance with a resistor of approx. 1 in series to CI. The output capacitor maintains the stability of the regulating loop. Stability is guaranteed with a rating of 22 F at an ESR of 3 max. in the operating temperature range. Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and controls the base of the series PNP transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage drops below 95.5 % of its typical value for more than 2 s, a reset signal is triggered on pin 3 and an external capacitor is discharged on pin 5. The reset signal is not cancelled until the voltage on the capacitor has exceeded the upper switching threshold VDT. A positive-edge-triggered watchdog circuit monitors the connected microprocessor and will likewise trigger a reset if pulses are missing. The IC can be disabled by a low level on the inhibit input and the current consumption drops to < 50 A. The IC also incorporates a number of circuits for protection against:
q q q q
Overload Overvoltage Overtemperature Reverse polarity
Semiconductor Group
2
1998-11-01
TLE 4261
Pin Configuration (top view) TLE 4261 TLE 4261 S
1
2
345
6
7
1
2
345
6
7
V
INH GND Watch QRES DRES VQ
AEP00592
V
INH GND Watch QRES DRES V Q
AEP01181
Pin Definitions and Functions (TLE 4261; S) Pin 1 Symbol Function Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vehicle electrical system. Oscillation of the input voltage can be damped by a resistor of approx. 1 in series with the input capacitor. Inhibit; switches off the IC when low. Reset output; open-collector output controlled by the rese delay. Ground Reset delay; wired to ground using a capacitor. Watchdog; monitors the microprocessor when active. 5-V output voltage; block to ground using a capacitor of 22 F. ESR is 3 in the operating temperature range.
3 1998-11-01
VI
2 3 4 5 6 7
INH QRES GND DRES Watch
VQ
Semiconductor Group
TLE 4261
Pin Configuration (top view) TLE 4261 G
N.C. N.C. QRES GND GND GND GND N.C. DRES N.C. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11
AEP01182
INH N.C. V GND GND GND GND N.C. VQ Watch
Pin Definitions and Functions (TLE 4261 G) Pin 18 Symbol Function Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vehicle electrical system. Oscillation of the input voltage can be damped by a resistor of approx. 1 in series with the input capacitor. Inhibit; switches off the IC when low. Reset output; open-collector output controlled by the reset delay. Ground; internally connected with pins 14 to 17. Reset delay; wired to ground using a capacitor. Watchdog; monitors the microprocessor when active. 5-V output voltage; block to ground using a capacitor of 22 F. ESR is 3 in the operating temperature range. Not connected
VI
20 3 4-7 14 - 17 9 11 12
INH QRES GND DRES Watch
VQ
1, 2, 8, 10, N.C. 13, 19
Semiconductor Group
4
1998-11-01
TLE 4261
Overvoltage Monitoring
Temperature Sensor
Saturation Control and Protection
Input
1 (18) BANDGAP Reference Control Amplifier Buffer
+ -
7 Output (12) RESET Generator 5 (9) 3 (3) RESET Delay RESET Output
Adjustment
Inhibit (4-7) (14-17) 4 GND
Watchdog
(20) 2 Inhibit
Numbers in parentheses for TLE 4261 G
(11) 6 Watchdog
AEB00002
Block Diagram
Semiconductor Group
5
1998-11-01
TLE 4261
Absolute Maximum Ratings Tj = - 40 to 150 C Parameter Symbol Limit Values min. Input Input voltage Input voltage Input current Inhibit Voltage Current Reset Output Voltage Current Ground Current Reset Delay Voltage Current Watchdog Voltage Output Differential voltage Current max. Unit Remarks
VI VI II
- 42 - -
45 65 1.6
V V A
-
t 400 ms
-
V2 I2
- 0.3 -
42 5
V mA
- -
VR IR
- 0.3 -
42 -
V -
- limited internally
IGND
-
0.5
A
-
VD ID
- 0.3 -
42 -
V -
- limited internally
VW
- 0.3
VI
V
-
VI - VQ IQ
- 5.25 -
VI
1.4
V A
- -
Semiconductor Group
6
1998-11-01
TLE 4261
Absolute Maximum Ratings (cont'd) Tj = - 40 to 150 C Parameter Symbol Limit Values min. Temperature Junction temperature Storage temperature Operating Range Input voltage Junction temperature Thermal Resistances System-air System-case
1)
Unit Remarks
max.
Tj Tstg
- - 50
150 150
C C
- -
VI Tj
- - 40
32 150
V C
see diagram -
Rth SA Rth SC
-
65 (70) 1) K/W - 3 (15) 1) K/W -
Figures in parenthesis refer to TLE 4261 G.
Semiconductor Group
7
1998-11-01
TLE 4261
Characteristics VI = 13.5 V; Tj = 25 C; V2 6 V; (unless specified otherwise) Parameter Symbol Limit Values min. typ. max. Unit Test Condition
Normal Operation Output voltage
VQ
4.75
5.00
5.25
V
25 mA IQ 500 mA; 6 V VI 28 V; - 40 C Tj 125 C 25 mA IQ 150 mA 6 V VI 40 V 0 V VI 2 V; V2 = VI; - 40 C Tj 125 C
Output voltage Output current Output current Current consumption; Iq = II - IQ Current consumption; Iq = II - IQ Current consumption; Iq = II - IQ Current consumption; Iq = II - IQ Drop voltage Drop voltage Load regulation Supply voltage regulation Supply voltage regulation
VQ IQ IQ Iq Iq Iq Iq VDr VDr
VQ VQ VQ
4.85 - 500 - - - - - - - - -
5.00 - 1000 - 5.0 40 45 0.35 0.2 15 15 5
5.15 50 - 3.5 10 65 80 0.5 0.3 35 50 25
V A mA mA mA mA mA V V mV mV mV
VI = 17 V to 28 V IQ = 0; VW > 6 V
6 V VI 28 V IQ = 150 mA 6 V VI 28 V IQ = 500 mA
VI < 6 V; IQ 500 mA; VI = 4.5 V; IQ = 0.5 A VI = 4.5 V; IQ = 0.15 A
25 mA IQ 500 mA 6 V VI 28 V IQ = 100 mA 6 V VI 16 V IQ = 100 mA
Semiconductor Group
8
1998-11-01
TLE 4261
Characteristics (cont'd) VI = 13.5 V; Tj = 25 C; V2 6 V; (unless specified otherwise) Parameter Symbol Limit Values min. Ripple rejection Temperature drift of output voltage typ. 54 2x 10- 4 max. - - dB Unit Test Condition
SVR
VQ
- -
fr = 100 Hz; Vr = 0.5 Vpp
1/C - 40 C Tj 150 C
Inhibit Operation Current consumption Current consumption Switching threshold for inhibit Switching threshold for inhibit
I1 I2 V2 V2
- - 5.0 2.0
- - 5.5 2.7
50 100 6.0 3.7
A A V V
V2 < 2 V; IQ = 0 V2 = 6 V
IC turned ON IC turned OFF
Reset Generator Switching threshold Saturation voltage, reset output Reverse current Charge current Switching threshold Delay switching threshold Saturation voltage, delay output
VRT VR IR Id VST VDT VC
94 - -
95.5 0.25 -
97 0.40 1
% V A
in % of VQ IQ > 500 mA; VI = 6 V
IR = 1 mA VR = 5 V VC = 1.5 V
- -
18.75 25 0.9 2.25 - 1 2.50 -
31.25 A 1.1 2.75 100 V V mV
VI = 4.5 V and Id
Semiconductor Group
9
1998-11-01
TLE 4261
Characteristics (cont'd) VI = 13.5 V; Tj = 25 C; V2 6 V; (unless specified otherwise) Parameter Symbol Limit Values min. Delay time Delay time typ. 10 2 max. - - ms s Unit Test Condition
tD tt
- -
CD = 100 nF
-
Watchdog Turn-OFF voltage Discharge current Switching voltage Pulse interval
VW ICD VCD TW
5.2 5.6 2.95 -
5.6 7.5 3.05 35
6.0 9.4 3.15 -
V A V ms
-
VC = 1.5 V
-
CD = 100 nF
General Data Turn-OFF voltage Turn-OFF hysteresis Leakage current Reverse output current
VIOFF
VI
41 - - -
43 6.5 - -
45 - 50 1.5
V V A mA
IQ < 1 mA
-
IQS IQR
VQ = 0 V; VI = 45 V VQ = 5 V; VI and V2 open
Semiconductor Group
10
1998-11-01
TLE 4261
Input 6 V to 40 V
1 470 nF 2 6
7 5 22 F 100 nF
Output 100 k RESET
TLE 4261
3
4
4.7 k From C
AES00021
KL15 7 V to 18 V
Application Circuit
1000 F
1
7 Q / SC 22 F
470 nF
TLE 4261
V +VR
4.7 k
VQ
3
2 5 4 D GND CD 100 nF 6
3
R
VR
V2
VC
VW
VDr = V -VQ
AES00135
V SVR = 20 log R VQ
Test Circuit
Semiconductor Group
11
1998-11-01
TLE 4261
( V CD - V ST ) ( I CD + I D ) ( V DT - V ST ) t W ----------------------------------------------------------- C D ; t dw = ------------------------------- CD I D x I CD ID Time Response in Watchdog Condition
V Wmin > 6 V VW V OFF V
3.3 V V RT V V Q RT
dV D = dt C D
V DT VC V
ST
tD VR
Overvoltage OverSpike voltage
Overtemperature
Undervoltage
Secondary Spike
Shortcircuit on Output
AET00593
Timing with Watchdog OFF
Semiconductor Group 12 1998-11-01
TLE 4261
Drop Voltage versus Output Current
VDr
800 mV 700
AED00586
Current Consumption versus Output Current
q
80 mA 70
AED00588
V = 4.5 V
600 500 400 300 200 60 50
V = 13.5 V
T j = 125 C
40 30 20
T j = 25 C
100 0 10 0
0
100
200
300
400
mA
600
0
100
200
300
400
mA
600
Q
Q
Current Consumption versus Input Voltage
120
AED00026
Output Voltage versus Input Voltage
12
AED00027
q mA
100
VQ
V 10
R L =10
80
RL =10
8
60
6
40
4
20
2
0
0
10
20
30
40 V 50
V
0
0
2
4
6
8
V 10
V
Semiconductor Group
13
1998-11-01
TLE 4261
Output Voltage versus Temperature
5.20
AED00028
Output Current versus Input Voltage
1.2
AED00594
VQ
V 5.10
Q mA
1.0
V = 13.5 V
5.00
T j = 25 C
0.8
4.90
0.6
4.80
0.4
4.70
0.2
4.60 -40
0
40
80
120 C 160
j
0
0
10
20
30
40 V 50
V
Input Step Response
2 V 1 0
AED00595
Load Step Response
mA 500 _ t R = t F ~ 1 s 25
AED00596
V
Q
40 VQ mV 20 0 -20 -40 -10
200 VQ mV 100
C Q = 22 s
C Q = 22 s
0 -100
0
10
20
30
s
t
50
-200 -10
0
10
20
30
s
t
50
Semiconductor Group
14
1998-11-01
TLE 4261
Charge Current ID and Discharge Current ICD versus Temperature
40 A 35 30 25 20 15 10 5 0 -40 V = 13.5 V V C = 1.5 V
AED01322
Switching Voltage VCD and VST versus Temperature
4
AED01323
V
V 3
V = 13.5 V V Cd
d
2
V ST
Cd
1
0
40
80
120 C 160 Tj
0 -40
0
40
80
120 C 160 Tj
Pulse Interval TW versus Temperature
1.6 ms T W 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -40
AED01324
Current Consumption of Inhibit at the Switching Point versus Temperature
120
AED01325
A 20 100
V = 13.5 V C d = 100 nF
80
60 ON 40
20
OFF
0
40
80
120 C 160 Tj
0 -40
0
40
80
120 C 160 Tj
Semiconductor Group
15
1998-11-01
TLE 4261
Package Outlines P-TO220-7-1 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75
+0.1
4.6 -0.2 1 x 45 1.27 +0.1
2.8
19.5 max
16 0.4
8.8 -0.2
8.6 0.3
15.4 0.3
GPT05108
1 1.27
7 0.6
+0.1 1)
2.6 0.4 +0.1 0.6 M 7x 4.5 0.4 8.4 0.4
1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Korper)
Weight approx. 2.1 g
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Dimensions in mm Semiconductor Group 16 1998-11-01
10.2 0.3
TLE 4261
Package Outlines (cont'd) P-TO220-7-2 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75
+0.1
4.6 -0.2 1 x 45 1.27 +0.1
2.8
11
1 1.27
7
13
0.4 +0.1 0.6 +0.1 1) 2.6
Weight approx. 2.1 g
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Dimensions in mm Semiconductor Group 17 1998-11-01
GPT05257
0.6 M 7x 1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Korper)
8.8 -0.2
15.4
TLE 4261
Package Outlines (cont'd) P-DSO-20-6 (Plastic Dual Small Outline)
2.65 max
0.35 x 45
2.45 -0.2
0.2 -0.1
1.27 0.35
+0.15 2)
0.4 +0.8 0.2 24x 20 11 0.1 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Weight approx. 0.6 g
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 18
0.23 +0.0 9 8 ma x
7.6 -0.2 1)
Dimensions in mm 1998-11-01

▲Up To Search▲

Price & Availability of TLE4261

	To Download TLE4261 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .